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Anisotropic response of nanosized bismuth films upon femtosecond laser excitation monitored by ultrafast electron diffraction
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10.1063/1.3652919
/content/aip/journal/apl/99/16/10.1063/1.3652919
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3652919
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Figures

Image of FIG. 1.
FIG. 1.

HRTEM images and diffraction pattern of as-deposited 5 nm thick Bi film (a) and laser annealed sample at laser fluence of 2.4 mJ/cm2 operated at 1 kHz repetition rate (b). Laser annealing causes some agglomeration of the as-deposited islands and an increase of voids. The diffraction patterns are characteristic of the bulk hexagonal unit cell, indicating no structural phase transition occurring during annealing. The ring intensities change by annealing indicating changes in film orientation.

Image of FIG. 2.
FIG. 2.

(Color online) Time evolution of Bragg peak normalized intensity. (a) For the (012) planes, the decay time τ is 11.2 and 4.1 ps for laser fluence of 1.5 and 3.3 mJ/cm2, respectively. (b) For the (110) planes, τ is 4.3 and 3.1 ps for laser fluence of 1.5 and 3.3 mJ/cm2, respectively. Anisotropy in the decay time of the (012) and (110) peaks indicates different lattice excitation mechanisms that is dependent on crystal direction.

Image of FIG. 3.
FIG. 3.

(Color online) Diffraction width of the (012) Bragg peak normalized to that without laser heating taken at delay time 41 ps for different laser fluences. Inset is time evolution of normalized Bragg peak width at two different laser fluences.

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/content/aip/journal/apl/99/16/10.1063/1.3652919
2011-10-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic response of nanosized bismuth films upon femtosecond laser excitation monitored by ultrafast electron diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3652919
10.1063/1.3652919
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