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Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines
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10.1063/1.3653804
/content/aip/journal/apl/99/16/10.1063/1.3653804
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3653804
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Normalized PL spectra, taken at two perpendicular linear polarization directions, of the neutral exciton (X) confined in a GaAs/AlGaAs QD at T = 8 K. The solid lines are Lorentzian fits of the experimental data. (b) Histogram for the excitonic emission linewidths of more than 45 QDs. (c) The Layer sequence of the nanomembrane containing GaAs/AlGaAs QDs. (d) Normalized second-order correlation function g (2)(τ) of X emission of a single QD under non-resonant cw excitation.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Color-coded PL intensity map of the emission wavelengths of a few QDs as a function of average in-plane strain (see text for the definition). The vertical dashed line highlights the mean wavelength of the 87Rb D2 transitions. (b) PL spectrum of the QD ensemble at T = 8 K. (c) Histogram of the emission shift of different QDs embedded in different mesas.

Image of FIG. 3.
FIG. 3.

(Color online) (a) PL spectra of the excitonic transitions of bulk-GaAs at F = 0. The thin (thick) line corresponds to emission polarized along the [110] ([10]) direction. (b) The measured peak energies (circles) of the excitonic transitions of bulk-GaAs are plotted as a function of the field F applied to the PMN-PT substrate. The solid lines are the calculated fits. (c) Ratio of the PL intensities of the lower energy bulk-GaAs transition polarized along [10] and [110] directions as a function of the ratio of the stresses along [10] and [110] directions. The closed circles are the experimentally measured values and the solid line represents the calculated values.

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/content/aip/journal/apl/99/16/10.1063/1.3653804
2011-10-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3653804
10.1063/1.3653804
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