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Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
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10.1063/1.3653805
/content/aip/journal/apl/99/16/10.1063/1.3653805
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3653805
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The MIS-HEMT structures and the electrostatic charts for the (a) Ga-polar and (b) N-polar cases.

Image of FIG. 2.
FIG. 2.

(Color online) Remote-ionized impurity scattering-limited (acoustic + optical), phonon limited, and total mobility as a function of the 2DEG density.

Image of FIG. 3.
FIG. 3.

(Color online) 2DEG mobility as a function of the 2DEG density for various AlGaN cap thickness.

Image of FIG. 4.
FIG. 4.

(Color online) The schematic of mobility versus dielectric/AlGaN interface charges density (nfix) for various 2DEG densities. As the 2DEG density is reduced, the mobility drop is more substantial due to lack of screening.

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/content/aip/journal/apl/99/16/10.1063/1.3653805
2011-10-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3653805
10.1063/1.3653805
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