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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
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10.1063/1.3654151
/content/aip/journal/apl/99/16/10.1063/1.3654151
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654151
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) 2θ−ω HRXRD scanning curve of GaN film (sample-B) grown on c-sapphire. (b) Room temperature PL spectra of Ga deficient GaN film (sample-B). (c) PL spectra of typical stoichiometric GaN film and (d) Raman spectrum of GaN films.

Image of FIG. 2.
FIG. 2.

(Color online) (a)-(b) XPS spectra of Ga 2p3/2 and N 1s core level of sample-A and (c)-(d) XPS spectra of Ga 2p3/2 and N 1s core level of sample-B.

Image of FIG. 3.
FIG. 3.

(Color online) Magnetization versus magnetic field (M-H) at RT for GaN films with N:Ga ∼ 2.1:1 (sample-A) and 4.3:1 (sample-B). The inset presents the zoomed view of the M-H plot.

Image of FIG. 4.
FIG. 4.

(Color online) Magnetization versus magnetic field (M-H) for GaN film with N:Ga ∼ 4.3:1 (sample-B) at RT and 5 K. The inset shows the close up view of the M-H plot.

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/content/aip/journal/apl/99/16/10.1063/1.3654151
2011-10-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654151
10.1063/1.3654151
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