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Control of spontaneous emission in InGaAs/GaAs quantum structure lattices
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10.1063/1.3654152
/content/aip/journal/apl/99/16/10.1063/1.3654152
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654152
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Figures

Image of FIG. 1.
FIG. 1.

(a) Square QSL array model shown an inter-QB distance d between origin and two lattice points (2,5)a and (5,2)a which fulfills the Bragg condition. Plane-view SEM picture of a NIL processed SQW sample is compared. The lattice constant of the QSL array is a = 200 nm. (b) Cross-sectional SEM micrograph of InGaAs/GaAs QB pillar arrays. The averaged base diameter of the pillars is 38 nm with a height of 25 nm.

Image of FIG. 2.
FIG. 2.

(Color online) PL spectra (77 K) comparison between as-grown (a) 10 nm In0.18Ga0.82As/GaAs QW, (b) 7.5 nm In0.075Ga0.925As/GaAs strained QW, (c) 10 nm In0.22Ga0.78As/GaAs QW, and the corresponding processed QSL arrays.

Image of FIG. 3.
FIG. 3.

(Color online) Energy band diagrams of QSL heterostructures fabricated from (a) 10 nm In0.18Ga0.82As/GaAs strained QW and (b) 7.5 nm In0.075Ga0.925As/GaAs strained QW. Phonon-absorption-assisted (E1 −Ehh1  + ℏω LO) and phonon-emission-assisted (E1 − Ehh1 − 2ℏω LO) spontaneous emission paths are shown in (a) and (b), respectively.

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/content/aip/journal/apl/99/16/10.1063/1.3654152
2011-10-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of spontaneous emission in InGaAs/GaAs quantum structure lattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654152
10.1063/1.3654152
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