1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
In situ x-ray study of the formation of defects in Ge islands on Si(001)
Rent:
Rent this article for
USD
10.1063/1.3654153
/content/aip/journal/apl/99/16/10.1063/1.3654153
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654153
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

GIXD data: radial scans along the 〈h0l〉 direction, with l = 0.04, in the vicinity of the Si(400) reflection, for different Ge depositions indicated in the graph in equivalent Ge monolayers.

Image of FIG. 2.
FIG. 2.

(Color online) Integrated reciprocal space map of diffuse scattering measured around the (200) Si basis-forbidden reflection. The dashed lines labeled (3a) and (3b) denote the trajectory, along which the line scans in Figs. 3(a) and 3(b) were performed, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Angular scans at h = 1.94 for several Ge deposit along the correspondent line denoted in Fig. 2. (b) Radial scans at the (200) reflection as a function of Ge deposit along the correspondent line denoted in Fig. 2. Evolution of (c) the size along the direction, i.e., the lateral extension of the defects, of (d) the integrated intensity of the {111} defects as a function of Ge deposit, θ, and (e) the average in-plane spacing Λ between interfacial dislocations and .

Loading

Article metrics loading...

/content/aip/journal/apl/99/16/10.1063/1.3654153
2011-10-19
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ x-ray study of the formation of defects in Ge islands on Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654153
10.1063/1.3654153
SEARCH_EXPAND_ITEM