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Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
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10.1063/1.3654155
/content/aip/journal/apl/99/16/10.1063/1.3654155
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654155

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Dark I-V characteristics of the solar cell devices without (device A) and with (device B) AlN IL. The inset shows the structure of the device with AlN IL and fabricated electrode configuration.

Image of FIG. 2.
FIG. 2.

(Color online) the current density-voltage properties of two solar cells upon AM 1.5 solar simulator illumination. The inset is the P-V curves of the device A and B obtained under AM 1.5 solar simulator illumination.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The cross-sectional TEM image for sample B taken with along the zone axis of ; (b) AFM images of sample B.

Tables

Generic image for table
Table I.

The summary of the photovoltaic property of the two samples.

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/content/aip/journal/apl/99/16/10.1063/1.3654155
2011-10-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3654155
10.1063/1.3654155
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