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Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
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10.1063/1.3655197
/content/aip/journal/apl/99/16/10.1063/1.3655197
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3655197

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Weight loss and heat flow as functions of the temperature for the TIZO solution with 10% Ti.

Image of FIG. 2.
FIG. 2.

(Color online) X-ray photoelectron spectra of (a) Ti 2p and (b) O 1s peaks for TIZO thin films with Ti molar ratios of 10%, 20%, and 40%. The O 1s peaks were fitted by using two Gaussian functions.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic structure of TIZO TFTs and (b) drain currents as functions of the gate voltage for Al (200  nm)/TIZO (20  nm)/SiO2 (200  nm)/Si thin film transistors with various Ti molar ratios. The channel length and width of the thin-film transistors were 50 and 640  μm, respectively.

Tables

Generic image for table
Table I.

Electrical properties of TIZO TFTs with various Ti molar ratios.

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/content/aip/journal/apl/99/16/10.1063/1.3655197
2011-10-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3655197
10.1063/1.3655197
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