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Shubnikov-de Haas measurement of electron effective mass in GaAs1− x Bi x
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10.1063/1.3655198
/content/aip/journal/apl/99/16/10.1063/1.3655198
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3655198

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Oscillatory component of the 2 K resistivity in GaAs0.9912Bi0.0088 (points), fit to a sinusoidal frequency with the envelope shown (solid curves). Resistivity was measured parallel to the current in a Hall bar and the magnetic field was normal to the sample surface.

Image of FIG. 2.
FIG. 2.

(Color online) Ratio of the resistivity oscillation amplitude from Fig. 1 at 2 K and the same measurement at 20 K, showing its decay with temperature (points). The solid curves show the precision of the fit to Eq. (1). From upper to lower, they are evaluated for = 0.0627 m 0, 0.0622 m 0, and 0.0617 m 0.

Image of FIG. 3.
FIG. 3.

(Color online) Electron effective mass extracted from the temperature decay of the SdH oscillation envelope, for varying Bi concentration (points). Solid curve is a perturbation theory calculation that includes the upper valence band and spin-orbit band.

Tables

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Table I.

Characterization results using XRD and 2 K Hall measurements of the GaAsBi samples. Δθ is the two-theta separation between the substrate and epilayer XRD peaks.

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/content/aip/journal/apl/99/16/10.1063/1.3655198
2011-10-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shubnikov-de Haas measurement of electron effective mass in GaAs1−xBix
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3655198
10.1063/1.3655198
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