Full text loading...
(Color online) Oscillatory component of the 2 K resistivity in GaAs0.9912Bi0.0088 (points), fit to a sinusoidal frequency with the envelope shown (solid curves). Resistivity was measured parallel to the current in a Hall bar and the magnetic field was normal to the sample surface.
(Color online) Ratio of the resistivity oscillation amplitude from Fig. 1 at 2 K and the same measurement at 20 K, showing its decay with temperature (points). The solid curves show the precision of the fit to Eq. (1). From upper to lower, they are evaluated for = 0.0627 m 0, 0.0622 m 0, and 0.0617 m 0.
(Color online) Electron effective mass extracted from the temperature decay of the SdH oscillation envelope, for varying Bi concentration (points). Solid curve is a perturbation theory calculation that includes the upper valence band and spin-orbit band.
Characterization results using XRD and 2 K Hall measurements of the GaAsBi samples. Δθ is the two-theta separation between the substrate and epilayer XRD peaks.
Article metrics loading...