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Hug-like island growth of Ge on strained vicinal Si(111) surfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) STM images of clean vicinal Si(111) surfaces. (a), (b) 1.5°-miscut surface. (c),(d) 5°-miscut surface. In panel (d) the coexistence of single- and triple-height steps is highlighted. (e),(f) 9.5°-miscut surface. In panel (f) triple steps are evidenced. The arrows indicate the direction.

Image of FIG. 2.
FIG. 2.

(Color online) STM images: (a), (b) 1.5°-miscut surface after deposition of (a) 3.6 ML and (b) 4.0 ML of Ge. (c), (d) 5°-miscut surface after deposition of (c) 3.9 ML and (d) 5.0 ML of Ge. (e), (f) 9.5°-miscut surface after deposition of (e) 3.8 ML and (f) 5.0 ML of Ge. The arrows indicate the direction.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Measured average-terrace widths of vicinal Si(111) surfaces. The continuous line represents the expected terrace-width dependence for a mixture of single- and triple-height steps given by [(ns (θ) + 3nt (θ))(tan θ)−1 h], where h = 0.31 nm is the height of a single step and ns , nt are the density of single- and triple-height steps, taken from Ref. 11. Triple steps (shown by the STM image in the inset) increase the average step-separation compared to a pure single-height phase (dashed curve). (b) Island aspect ratio as a function of miscut angle. The dashed line is the average surface misorientation tan(θ).

Image of FIG. 4.
FIG. 4.

(Color online) (a)-(h) STM images of different stages of Ge island formation on the 1.5°-miscut Si(111) surface. The images were taken at a nominal Ge coverage of 4.8 ML over an area of a ∼20 μm2 of the sample. The direction is indicated by arrows. (i) FE simulations of the in-plane strain tensor ɛ for 3D models of Ge islands based on the experimental geometry extracted from STM images. The white arrows indicate the direction of the island growth observed in the experiment.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hug-like island growth of Ge on strained vicinal Si(111) surfaces