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(Color online) (a) I-V characteristics of GST device and device connected with 1-kΩ resistor. (b) Cumulative probability of resistance distribution for GST device and device connected with 1-kΩ resistor.
(Color online) (a) I-V characteristics of without oxidation and 30 min, 1 h in O2 annealing, (b) XPS depth profiling of oxidized GST/Pt stack, and (c) Ge 2p3/2 portions of the XPS spectra from GST films with O2 annealing.
(Color online) Key concept of the solution proposed in this study. (a) GST device and (b) oxidized GST device.
(Color online) (a) Cycle to cycle and (b) Cell to cell of cumulative probability of resistance distribution of oxidized GST and GST devices.
(Color online) Retention characteristics measured at 85 °C.
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