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Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
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10.1063/1.3656247
/content/aip/journal/apl/99/16/10.1063/1.3656247
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3656247
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) I-V characteristics of GST device and device connected with 1-kΩ resistor. (b) Cumulative probability of resistance distribution for GST device and device connected with 1-kΩ resistor.

Image of FIG. 2.
FIG. 2.

(Color online) (a) I-V characteristics of without oxidation and 30 min, 1 h in O2 annealing, (b) XPS depth profiling of oxidized GST/Pt stack, and (c) Ge 2p3/2 portions of the XPS spectra from GST films with O2 annealing.

Image of FIG. 3.
FIG. 3.

(Color online) Key concept of the solution proposed in this study. (a) GST device and (b) oxidized GST device.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Cycle to cycle and (b) Cell to cell of cumulative probability of resistance distribution of oxidized GST and GST devices.

Image of FIG. 5.
FIG. 5.

(Color online) Retention characteristics measured at 85 °C.

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/content/aip/journal/apl/99/16/10.1063/1.3656247
2011-10-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3656247
10.1063/1.3656247
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