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Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films
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10.1063/1.3652915
/content/aip/journal/apl/99/17/10.1063/1.3652915
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3652915
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) 9.0 μm × 11.3 μm images from an identical location on a CISe thin film. (a) SEM micrograph, (b) KPFM topography image, (c) KPFM work function image, (d) EBSD orientation distribution map, and (e) EBSD pattern quality map. In (b) and (c), the position of GBs is indicated by dashed lines, as deduced from the EBSD orientation distribution map. The positions of the line profiles of Fig. 2 are indicated by circles (color online: red/blue). In (e), Σ3 GBs are highlighted by solid lines (color online: red). The positions of Σ3 GBs analyzed in Fig. 3 are indicated by crosses (color online: red with yellow dots) with yellow dots. The positions of the non-Σ3 GBs analyzed in Fig. 3 are marked by triangles (color online: blue).

Image of FIG. 2.
FIG. 2.

(Color online) KPFM line profiles of (a) topography and (b) work function of a typical Σ3 GB. KPFM line profiles of (c) topography and (d) work function of a typical charged non-Σ3 GB. The background of the averaged profiles shows images of the corresponding surface area. The positions of the profiles are indicated in Figs. 1(b) and 1(c) by circles (color online: red/blue).

Image of FIG. 3.
FIG. 3.

(Color online) Electronic properties of GBs in CISe, shown separately for Σ3 GBs and for non-Σ3 GBs. The symmetry information was obtained from the EBSD measurement. The black numbers indicate the number of electronically inactive GBs.

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/content/aip/journal/apl/99/17/10.1063/1.3652915
2011-10-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3652915
10.1063/1.3652915
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