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Polarization dependent study of gain anisotropy in semipolar InGaN lasers
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10.1063/1.3655183
/content/aip/journal/apl/99/17/10.1063/1.3655183
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3655183

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Polarization of the eigenmodes above ASE threshold; (b) ASE threshold determination of a 400 nm SQW laser structure.

Image of FIG. 2.
FIG. 2.

(Color online) PL data from VSL measurements for the eo mode in m-direction.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of net gain (left) and simulated modal gain (right) for a 400 nm SQW laser in c′-direction with TE/TM modes (top) and in m-direction for eo and o modes (bottom).

Image of FIG. 4.
FIG. 4.

(Color online) Calculated peak modal gain for a 400 nm laser structure showing the ordering of gain for the different modes.

Tables

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Table I.

Confinement factors Γ and effective refractive indices nr for the TE, TM, extraordinary, and ordinary modes of the 400 nm laser structure.

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/content/aip/journal/apl/99/17/10.1063/1.3655183
2011-10-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization dependent study of gain anisotropy in semipolar InGaN lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3655183
10.1063/1.3655183
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