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RHEED patterns observed for two specific orientations of GaAs (001) substrate during MBE growth of (a) Bi2Te3 and (b) Bi2Se3.
(Color online) Model-fitted specular x-ray reflectivity of the Bi2Te3 film, used for estimating the film thickness. Error bars correspond to ±1σ.
X-ray diffraction patterns obtained from (a) 233-nm-thick Bi2Te3 film and (b) 130-nm-thick Bi2Se3 film grown by MBE on GaAs(001) substrate.
Transmission electron microscopy (TEM) images showing cross sections of topological insulator Bi2Se3 grown by MBE on a deoxidized GaAs(001) substrate.
Representative Raman spectra measured in MBE films of: (a) Bi2Te3 and (b) Bi2Se3. The film (a) is 136 nm thick and the film (b) is 150 nm thick.
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