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Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates
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10.1063/1.3655995
/content/aip/journal/apl/99/17/10.1063/1.3655995
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3655995
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns observed for two specific orientations of GaAs (001) substrate during MBE growth of (a) Bi2Te3 and (b) Bi2Se3.

Image of FIG. 2.
FIG. 2.

(Color online) Model-fitted specular x-ray reflectivity of the Bi2Te3 film, used for estimating the film thickness. Error bars correspond to ±1σ.

Image of FIG. 3.
FIG. 3.

X-ray diffraction patterns obtained from (a) 233-nm-thick Bi2Te3 film and (b) 130-nm-thick Bi2Se3 film grown by MBE on GaAs(001) substrate.

Image of FIG. 4.
FIG. 4.

Transmission electron microscopy (TEM) images showing cross sections of topological insulator Bi2Se3 grown by MBE on a deoxidized GaAs(001) substrate.

Image of FIG. 5.
FIG. 5.

Representative Raman spectra measured in MBE films of: (a) Bi2Te3 and (b) Bi2Se3. The film (a) is 136 nm thick and the film (b) is 150 nm thick.

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/content/aip/journal/apl/99/17/10.1063/1.3655995
2011-10-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3655995
10.1063/1.3655995
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