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(a) Schematic diagram of the fabricated devices and cross-view EFTEM images of the SRO films with (b) 4.0 at. % and (c) 5.1 at. % of silicon excess.
Typical I–V curve for LECs with annealed SRO films.
(Color online) (a) Correlation between EL and the current that flows through the LEC with embedded Si-nps of 1.5 nm, (b) EL and PL spectra, and (c) normalized EL intensity from LEC devices with SRO films.
(Color online) Images of the LEC devices with embedded Si-np size of (a) 1.5 and (b) 2.7 nm biased with different electric fields.
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