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(Color online) Room temperature multi-frequency C-V characteristics for Pd/10 nm HfO2/n-InP with different PDA temperatures: (a) no anneal, (b) 400 °C PDA, (c) 450 °C PDA, and (d) 500 °C PDA. Significantly increased interface trap response is observed for 500 °C PDA sample.
(Color online) Dit profiles for samples with different PDA temperatures showing a peak near midgap in InP and a tail, which extends into the InP conduction band.
(Color online) (a) In 3d and (b) P 2p core level spectra for samples with varying PDA showing an increase in native oxides with annealing.
(Color online) O 1s spectra for samples with varying PDA suggesting a bond conversion from O-H to In/-P-O bonding is favored during annealing.
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