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Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
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10.1063/1.3656001
/content/aip/journal/apl/99/17/10.1063/1.3656001
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3656001
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Room temperature multi-frequency C-V characteristics for Pd/10 nm HfO2/n-InP with different PDA temperatures: (a) no anneal, (b) 400 °C PDA, (c) 450 °C PDA, and (d) 500 °C PDA. Significantly increased interface trap response is observed for 500 °C PDA sample.

Image of FIG. 2.
FIG. 2.

(Color online) Dit profiles for samples with different PDA temperatures showing a peak near midgap in InP and a tail, which extends into the InP conduction band.

Image of FIG. 3.
FIG. 3.

(Color online) (a) In 3d and (b) P 2p core level spectra for samples with varying PDA showing an increase in native oxides with annealing.

Image of FIG. 4.
FIG. 4.

(Color online) O 1s spectra for samples with varying PDA suggesting a bond conversion from O-H to In/-P-O bonding is favored during annealing.

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/content/aip/journal/apl/99/17/10.1063/1.3656001
2011-10-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3656001
10.1063/1.3656001
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