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Spin-orbit coupling effect on bismuth donor lasing in stressed silicon
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Energy level diagram of Bi donor states in silicon crystal; (b) the same versus stress (P) applied along [100] axis, δE—intervalley splitting. The unstressed levels were drawn accordingly to Ref. 3, while stress dependence for spin-split states is calculated following Ref. 4.

Image of FIG. 2.
FIG. 2.

(Color online) Bi donor laser states/transitions in unstressed silicon crystal. The laser transitions are shown by solid arrows down. Relaxation paths assisted by intervalley/intravalley phonon emission are indicated by the dashed arrows. The CO 2 laser pumping is shown by a solid upward arrow.

Image of FIG. 3.
FIG. 3.

(Color online) (a) THz output intensity of Si:Bi laser versus [100] axial stress under different CO 2 laser intensities; (b) Summary of all laser lines/transitions observed in the experiment. The solid curves drawn through the data points are the theoretical dependences, calculated following Ref. 4. The error bars indicate the resolution of spectrometer. (c) Several characteristic spectra of the Si:Bi subject to stress. The baseline is shifted for clarity.

Image of FIG. 4.
FIG. 4.

(Color online) Laser transitions in Si:Bi under uniaxial stress along [100]. Observed transitions are shown by solid arrows down. Resonant interaction with intervalley phonons is shown by dashed line down, δE—intervalley splitting.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-orbit coupling effect on bismuth donor lasing in stressed silicon