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(a) Energy level diagram of Bi donor states in silicon crystal; (b) the same versus stress (P) applied along  axis, δE—intervalley splitting. The unstressed levels were drawn accordingly to Ref. 3, while stress dependence for spin-split states is calculated following Ref. 4.
(Color online) Bi donor laser states/transitions in unstressed silicon crystal. The laser transitions are shown by solid arrows down. Relaxation paths assisted by intervalley/intravalley phonon emission are indicated by the dashed arrows. The CO 2 laser pumping is shown by a solid upward arrow.
(Color online) (a) THz output intensity of Si:Bi laser versus  axial stress under different CO 2 laser intensities; (b) Summary of all laser lines/transitions observed in the experiment. The solid curves drawn through the data points are the theoretical dependences, calculated following Ref. 4. The error bars indicate the resolution of spectrometer. (c) Several characteristic spectra of the Si:Bi subject to stress. The baseline is shifted for clarity.
(Color online) Laser transitions in Si:Bi under uniaxial stress along . Observed transitions are shown by solid arrows down. Resonant interaction with intervalley phonons is shown by dashed line down, δE—intervalley splitting.
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