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High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
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10.1063/1.3656970
/content/aip/journal/apl/99/17/10.1063/1.3656970
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3656970
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional schematic of the device structure. (b) Calculated 1-D transverse mode profile for the device structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) L-I characteristics collected before and after facet coating for a 600 μm long by 10 μm wide ridge waveguide LD. Inset: lasing spectra collected before and after facet coating. (b) L-I characteristics collected at varying stage temperatures. Inset: dependence of threshold current and lasing wavelength on stage temperature.

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/content/aip/journal/apl/99/17/10.1063/1.3656970
2011-10-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3656970
10.1063/1.3656970
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