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Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer
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10.1063/1.3657137
/content/aip/journal/apl/99/17/10.1063/1.3657137
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657137
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The X-TEM picture of a 3D multi-gate N-channel FinFET device integrated with a high tensile strained ILD-SiNx capping layer.

Image of FIG. 2.
FIG. 2.

(Color online) The universal curves (Ioff versus Ion) of the high tensile and conventional low tensile 3D multi-gate N-channel FinFET devices.

Image of FIG. 3.
FIG. 3.

(Color online) The comparisons of Id-Vd characteristic curves and N-channel mobility curves (in the inset) between the FinFETs with a high tensile and a low tensile strained ILD-SiNx capping layer.

Image of FIG. 4.
FIG. 4.

(Color online) The comparisons of hot carrier injection lifetime between the FinFETs with a high tensile and a low tensile strained ILD-SiNx capping layer.

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/content/aip/journal/apl/99/17/10.1063/1.3657137
2011-10-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657137
10.1063/1.3657137
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