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Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer
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10.1063/1.3657137
/content/aip/journal/apl/99/17/10.1063/1.3657137
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657137
/content/aip/journal/apl/99/17/10.1063/1.3657137
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/content/aip/journal/apl/99/17/10.1063/1.3657137
2011-10-26
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657137
10.1063/1.3657137
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