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Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
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10.1063/1.3657149
/content/aip/journal/apl/99/17/10.1063/1.3657149
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657149

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Representative L-I characteristics for a set of devices with varying cavity lengths. (b) Variation of Jth across the wafer.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of Jth and ( on cavity length. (b) Dependence of material gain on current density.

Tables

Generic image for table
Table I.

Summary of the active region structure (DH = double heterostructure, SQW = single quantum well), emission wavelength (λ), and recombination coefficients reported in a number of studies of c-plane InGaN-based light-emitting devices. Corresponding calculations of were made using Eq. (3) and assuming Jtr  = 0.6 kA/cm2 and d = 24 nm.

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/content/aip/journal/apl/99/17/10.1063/1.3657149
2011-10-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/17/10.1063/1.3657149
10.1063/1.3657149
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