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(Color online) (a) Representative L-I characteristics for a set of devices with varying cavity lengths. (b) Variation of Jth across the wafer.
(Color online) (a) Dependence of Jth and ( on cavity length. (b) Dependence of material gain on current density.
Summary of the active region structure (DH = double heterostructure, SQW = single quantum well), emission wavelength (λ), and recombination coefficients reported in a number of studies of c-plane InGaN-based light-emitting devices. Corresponding calculations of were made using Eq. (3) and assuming Jtr = 0.6 kA/cm2 and d = 24 nm.
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