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Electrical signal-to-noise ratio improvement in indirect detection of mid-IR signals by wavelength conversion in silicon-on-sapphire waveguides
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10.1063/1.3651292
/content/aip/journal/apl/99/18/10.1063/1.3651292
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3651292

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematics of direct and indirect mid-IR detection.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Conversion efficiency from mid-IR to telecommunication wavelength. The dark region in the figure corresponds to the pump wavelength region to enable the conversion from the peaked mid-IR to telecommunication wavelength. The pump wavelength is greater than the 2.2 μm two-photon-absorption (TAP) threshold. (b) Conversion efficiency (blue) and peak wavelength (green) dependence on pump intensity.

Image of FIG. 3.
FIG. 3.

(Color online) Detection noise at near-IR InGaAs detector in indirect detection.

Image of FIG. 4.
FIG. 4.

(Color online) (a) eSNR improvement by using indirect detection with respect to direct detection. PbSe and HgCdTe photoconductive detectors are set to operate at room temperature and InSb photovoltaic detector is liquid nitrogen cooled to 77 K. (b) Bandwidth on which there is SNR improvement by using indirect detection increase almost linearly with intensity after the threshold and before saturation (Pin = 0.1 μW).

Tables

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Table I.

Detector parameters used in calculation.

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/content/aip/journal/apl/99/18/10.1063/1.3651292
2011-11-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical signal-to-noise ratio improvement in indirect detection of mid-IR signals by wavelength conversion in silicon-on-sapphire waveguides
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3651292
10.1063/1.3651292
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