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(Color online) Band-gap energies of quaternary AlInGaN alloys grown on GaN for several cases with different Al and In compositions. Symbols are the experimental data taken from Refs. 18–20, and solid line is the result from the interpolation formula. The Al and In compositions for each case are listed in Table I.
(Color online) (a) Internal field (solid line) contour in the well of 2.5 nm AlInGaN/InGaN QW structures grown on GaN and band-gap energy (dashed line) contour of quaternary AlInGaN alloys. Here, the In composition in the InGaN barrier is set to be 0.1. The label "0" on the solid line means that the internal field in the well is zero.
(Color online) (a) Spontaneous emission spectra with many-body effects as a function of the wavelength and (b) normalized optical matrix element as a function of the in-plane wave vector k || for 2.5 nm AlInGaN/InGaN QW structures grown on GaN.
(Color online) (a) Spontaneous emission peak, (b) conduction band offset and the quasi-Fermi-level separation, and (c) internal field in the well and normalized optical matrix element for 2.5 nm Al0.08In0.22Ga0.67N/InxGa1− x N QW structures grown on GaN.
Experimental values for band-gap energies of AlInGaN materials.
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