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High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon
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10.1063/1.3657515
/content/aip/journal/apl/99/18/10.1063/1.3657515
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3657515
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram for SThM measurement. (b) The upper inset shows a topographic atomic force microscope image of the graphene device used for the calibration process. The lower inset shows the SThM image of the same device with 5 mW power applied. The main panel displays the SThM signal profiles along the cross section marked by dotted line in the lower inset for various levels of electrical power dissipation in the range of 0.3-10 mW. (c) Anti-Stokes and Stokes Raman G mode signals (symbols) for the graphene sample in the inset of (b) and Voigt fits (solid lines) for several different levels of electrical power dissipation. The spectra, all acquired by 532 nm single mode laser with the same integration time, are vertically offset for clarity. (d) Comparison of the SThM signal (triangles) acquired from (b) and temperature (filled circle) inferred from the Raman data in (c) as a function of applied electric power. The dotted line is a linear fit that provides the calibration for the SThM signal.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Left: Topographic image of a GNR of 86 nm width and 3 μm length. Right: The corresponding SThM image for an applied bias voltage of V SD  = 3 V, which produces Joule heating of P = 78 μW. (b) The cross sectional temperature distribution of the GNR and underlying SiO2 substrate perpendicular to the GNR. The dashed line is a fit based on the heat diffusion equation to describe the steady-state temperature profile in the oxide layer below the GNR. (c) Temperature profiles along the length of the GNR shown in (a). The dashed line is a fit based on the heat diffusion equation to model the longitudinal temperature profile along the GNR.

Image of FIG. 3.
FIG. 3.

(Color online) (a) From top to bottom: topographic, SThM(VSD  = 3 V and P = 203 μW) and SGM(V SD  = 0.5 V and Vtip  = 5 V) images of a defected GNR with 100 nm width, 1 μm length embedded under 8 nm thick HSQ. (b) Temperature (dots) and current flow (solid line: Vtip  = 5 V, dashed line: Vtip  = 3 V) profiles along the GNR shown in (a). The inset shows current flow as a function of VSD . (c) Topographic(top left) and SThM images of another defected GNR at different back gate voltages, (1) VG  = 0 V, (2) VG  = 55 V, and (3) VG  = 80 V, respectively. The bias voltage is held at VSD  = 1 V. (d) ISD as a function of VG at fixed V SD  = 1 V for the GNR in (c).

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/content/aip/journal/apl/99/18/10.1063/1.3657515
2011-11-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3657515
10.1063/1.3657515
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