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Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
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10.1063/1.3657521
/content/aip/journal/apl/99/18/10.1063/1.3657521
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3657521
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM image of the surface of the LLO film.

Image of FIG. 2.
FIG. 2.

(Color online) (a) La3d core-level and (b) O1s energy loss spectra of LLO.

Image of FIG. 3.
FIG. 3.

(a) Cross sectional TEM micrograph of the 16 nm-thick LLO thin film on AlGaN/GaN heterostructure. (b) Higher magnification image for illustration of a thin amorphous LLO layer adjacent to GaN. (c) Metal atomic (Lu/La) ratios at 5 locations in the vertical direction of the LLO film from EDX profiles.

Image of FIG. 4.
FIG. 4.

(Color online) C-V characteristics of AlGaN/GaN Schottky and LLO/AlGaN/GaN MIS diode.

Image of FIG. 5.
FIG. 5.

(Color online) (a) I-V characteristics of AlGaN/GaN Schottky and LLO/AlGaN/GaN MIS diode. (b) Comparison of Von between AlGaN/GaN Schottky and LLO/AlGaN/GaN MIS diode.

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/content/aip/journal/apl/99/18/10.1063/1.3657521
2011-11-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3657521
10.1063/1.3657521
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