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Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
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10.1063/1.3658388
/content/aip/journal/apl/99/18/10.1063/1.3658388
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3658388
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic drawing of the operation of an LET showing enhanced hole injection into active region by an anode-to-anode bias. (b) Photo of an LET with interdigitated anode fingers.

Image of FIG. 2.
FIG. 2.

(Color online) Efficiency versus cathode current for LETs under various anode-to-anode biases.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Illustration of effective area modulation of the active region of an LET with the linear voltage variation approximation. Top view of the lit-up LETs under different anode-to-anode voltages: (b) 0 V and (c) 4 V.

Image of FIG. 4.
FIG. 4.

(Color online) Current density as a function of cathode current with various anode-to-anode biases, calculated under the linear voltage approximation.

Image of FIG. 5.
FIG. 5.

(Color online) Efficiency versus drive current density for LETs under different anode-to-anode biases.

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/content/aip/journal/apl/99/18/10.1063/1.3658388
2011-11-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3658388
10.1063/1.3658388
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