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Experimental and theoretical investigation of thermal stress relief during epitaxial growth of Ge on Si using air-gapped SiO2 nanotemplates
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10.1063/1.3659320
/content/aip/journal/apl/99/18/10.1063/1.3659320
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3659320
/content/aip/journal/apl/99/18/10.1063/1.3659320
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/content/aip/journal/apl/99/18/10.1063/1.3659320
2011-11-04
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental and theoretical investigation of thermal stress relief during epitaxial growth of Ge on Si using air-gapped SiO2 nanotemplates
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3659320
10.1063/1.3659320
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