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Erratum: “Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection” [Appl. Phys. Lett. 97, 022105 (2010)]
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1. K.-R. Jeon, B.-C. Min, H.-S. Lee, I.-J. Shin, C.-Y. Park, and S.-C. Shin, Appl. Phys. Lett. 97, 022105 (2010).
http://dx.doi.org/10.1063/1.3454276
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FIG. 2.

(Color online) (a) J-V characteristics of CoFe(5.0 nm)/MgO/n-Ge tunnel contacts with the 1.5-nm, 2.0-nm, and 2.5-nm MgO at RT. Left inset: schematic diagram of the sample structure. Right inset: J-V curves with linear scale up to ±0.4 V.

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2011-11-02
2014-04-17

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Scitation: Erratum: “Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection” [Appl. Phys. Lett. 97, 022105 (2010)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/18/10.1063/1.3659488
10.1063/1.3659488
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