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Identification of boron clusters in silicon crystal by B1s core-level X-ray photoelectron spectroscopy: A first-principles study
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10.1063/1.3658030
/content/aip/journal/apl/99/19/10.1063/1.3658030
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/19/10.1063/1.3658030
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Supercell size dependence of B1s core level calculated by STS method. The horizontal axis refers to the number of atoms per supercell for pure Si crystal.

Image of FIG. 2.
FIG. 2.

(Color online) B1s core-level XPS of B clusters. Experimental and deconvoluted data are from Mizushima et al. (see Ref. 4) (curves). Vertical lines indicate the values calculated by the ΔSCF method for icosahedral B12, substitutional B (Bs), 〈001〉 B-Si, and octahedral B6. The substitutional B line is adjusted so that experimental and calculated values match.

Image of FIG. 3.
FIG. 3.

(Color online) B1s core-level XPS binding energy of B clusters for as-doped sample obtained by plasma doping. The experimental data (curve) and deconvoluted peaks (vertical thin line) are from Uedono et al. (see Ref. 12). The vertical thick line indicates the calculated value for the complex with divacancy and two substitutional B. The arrow-marked region indicates the calculated range of various combinations of mono/divacancy and substitutional B atoms.

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/content/aip/journal/apl/99/19/10.1063/1.3658030
2011-11-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of boron clusters in silicon crystal by B1s core-level X-ray photoelectron spectroscopy: A first-principles study
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/19/10.1063/1.3658030
10.1063/1.3658030
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