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Spectral resolution of states relevant to photoinduced charge transfer in modified pentacene/ZnO field-effect transistors
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/content/aip/journal/apl/99/19/10.1063/1.3660225
2011-11-09
2014-11-29

Abstract

Pentacene field-effect transistors incorporating ZnOquantum dots can be used as a sensitive probe of the optical properties of a buried donor-acceptor interface. Photoinduced charge transfer between pentacene and ZnO in these devices varies with incident photonenergy and reveals which energies will contribute most to charge transfer in other structures. A subsequent slow return to the dark state following the end of illumination arises from near-interface traps. Charge transfer has a sharp onset at 1.7 eV and peaks at 1.82 and 2.1 eV due to transitions associated with excitons, features absent in pentacene FETs without ZnO.

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Scitation: Spectral resolution of states relevant to photoinduced charge transfer in modified pentacene/ZnO field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/19/10.1063/1.3660225
10.1063/1.3660225
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