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Spectral resolution of states relevant to photoinduced charge transfer in modified pentacene/ZnO field-effect transistors
11. K. Lee, M. S. Oh, S.-J. Mun, K. H. Lee, T. W. Ha, J. H. Kim, S.-H. Ko Park, C.-S. Hwang, B. H. Lee, M. M. Sung, and S. Im, Adv. Mater. 22, 3260 (2010).
16. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (Wiley, New Jersey, 2007).
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Pentacene field-effect transistors incorporating ZnOquantum dots can be used as a sensitive probe of the optical properties of a buried donor-acceptor interface. Photoinduced charge transfer between pentacene and ZnO in these devices varies with incident photonenergy and reveals which energies will contribute most to charge transfer in other structures. A subsequent slow return to the dark state following the end of illumination arises from near-interface traps. Charge transfer has a sharp onset at 1.7 eV and peaks at 1.82 and 2.1 eV due to transitions associated with excitons, features absent in pentacene FETs without ZnO.
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