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(Color online) C-V characteristics of Al/Al2O3/GeO2/Ge MOS capacitors. The inset shows Dit distribution of the fabricated MOSFETs.
(Color online) The plot of mobility versus electric field. The extracted peak electron mobility is about 1050 cm2/Vs which exceeds the Si universal mobility. A larger power spectrum of Δm = 0.62 nm and Λ = 1.3 nm was observed in Ge mobility as compared to Si.
The configurations of the stress direction (s) and channel direction (J). The darker valleys indicate more electron population. (a) the biaxial tensile stress on 〈100〉 channel direction, (b) the uniaxial 〈100〉 tensile stress on 〈100〉 channel direction, (c) the uniaxial 〈110〉 tensile stress on 〈100〉 channel direction, and (d) the uniaxial 〈110〉 tensile stress on 〈110〉 channel direction.
(Color online) Electron mobility enhancement for different strain/channel configurations. The uniaxial 〈110〉 tensile strain of ∼0.08% on the 〈110〉 channel direction provides the large mobility enhancement of ∼12%.
(Color online) Electron mobility enhancement as a function of strain at 0.3 MV/cm.
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