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(Color online) (a) Variation in the tox of Pt/(Al-doped)TiO2/RuO2(or Ru) capacitors as a function of physical thickness of dielectric films (b) the leakage current density at the capacitor voltage of 0.8 V as a function of tox.
(Color online) Change in the leakage current density of the (a) Pt/TiO2/RuO2 (or Ru) and (b) Pt/ATO/RuO2 (or Ru) capacitors as a function of the applied bias voltage.
(Color online) (a) The negative and (b) positive J-V characteristics of Pt/TiO2/RuO2 capacitor with elevating measurement temperature from 318 K to 368 K (Inset in (a) and (b)) Typical plotting of Ln(J/T2) vs 1000/T according to the Schottky conduction mechanism.
(Color online). (a) Extracted Schottky barrier height at Pt/TiO2 and TiO2/RuO2 at zero bias (b) The valance band X-ray photoelectron spectra of TiO2 (10 nm)/Ru (upper panel) and TiO2 (10 nm)/RuO2 (lower panel) stacks.
MIM capacitor stacks used in this work.
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