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Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
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10.1063/1.3610468
/content/aip/journal/apl/99/2/10.1063/1.3610468
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610468
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Figures

Image of FIG. 1.
FIG. 1.

STEM-HAADF images of a FIB-prepared APT sample containing InxGa1−xN QWs. (a) Image taken prior to electron beam exposure in TEM-mode. (b) Image taken after 64 min of electron beam exposure in TEM-mode.

Image of FIG. 2.
FIG. 2.

(Color online) Reconstructed atom maps of 35 nm diameter central cylinders from the APT data sets of (a) the control sample and (b) the sample exposed to the electron beam. In both cases 100% of the In atoms detected are shown as orange dots and no other atoms are shown.

Image of FIG. 3.
FIG. 3.

Frequency distributions of QW indium content: (a) for the uppermost QW of the control sample and (b) for the uppermost four QWs in the sample which was exposed to the electron beam in TEM. Each QW was divided into bins of 100 atoms, and the indium fraction x was calculated for each bin. The solid line shows the binomial distribution that would be expected in the case of a random ternary alloy. Graphs (c) and (d) are difference plots, for the control and exposed sample respectively, where ΔF is the difference between the observed and expected frequency.

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/content/aip/journal/apl/99/2/10.1063/1.3610468
2011-07-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610468
10.1063/1.3610468
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