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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
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10.1063/1.3610469
/content/aip/journal/apl/99/2/10.1063/1.3610469
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610469
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Relative valence band distances of wurtzite III-nitrides as a function of the crystal field splitting Δcf. The spin-orbit splitting was assumed to be constant (here, Δso = 16 meV).

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of photoluminescence spectra from the AlN sample excited by ArF* laser light (black, bottom line) and synchrotron radiation having λ = 169 nm (red, top line). The corresponding photoluminescence excitation spectrum (blue, open circles) shows two steps which are marked by arrows. All curves are recorded at T = 10 K.

Image of FIG. 3.
FIG. 3.

(Color online) Results from the AlGaN sample at T = 10 K. (a) Imaginary parts of the ordinary (ε 2 , o) and extraordinary (ε 2 , e) dielectric function. (b) Calculated reflectivity (dashed line, red, R) and transmission (black, T) for p-polarized light with angle of incidence of 35°. (c) Comparison of photoluminescence excited by ArF* laser light (continuous line, black, PL) and the corresponding photoluminescence excitation spectrum (red, PLE). The calculated absorption is shown overlayed (open circles, green, A).

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/content/aip/journal/apl/99/2/10.1063/1.3610469
2011-07-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610469
10.1063/1.3610469
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