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Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material
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10.1063/1.3610476
/content/aip/journal/apl/99/2/10.1063/1.3610476
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610476
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The schematic band diagram under negative bias stress with illumination.

Image of FIG. 2.
FIG. 2.

(Color online) The evolutions of transfer characteristics for the devices without the UPB having (a) 5 nm, (b) 10 nm, and (c) 20 nm thick ZnO layer and those for the devices with the UPB inserted at (d) 5 nm, (e) 10 nm, and (f) 15 nm depth from the GI/semiconductor interface as a function of negative bias illumination stress time.

Image of FIG. 3.
FIG. 3.

(Color online) The evolutions of transfer characteristics for the devices without the UPB having (a) 5 nm, (b) 10 nm, and (c) 20 nm thick ZnO layer and those for the devices with the UPB inserted at (d) 5 nm, (e) 10 nm, and (f) 15 nm depth from the GI/semiconductor interface as a function of positive bias stress time.

Image of FIG. 4.
FIG. 4.

(Color online) ΔVON versus NBIS time of the UPB inserted ZnO TFTs with various inserted positions.

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/content/aip/journal/apl/99/2/10.1063/1.3610476
2011-07-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/2/10.1063/1.3610476
10.1063/1.3610476
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