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(Color online) (a) Device layer structure; cathode-anode separation is several μm (not to scale). (b) Energy band diagram sketch showing vertical electric field opposite to growth direction. (c) Image of interdigitated device.
(Color online) IV curves with ambient room light (black) and for mode-locked (solid) and cw (dots) laser at 830 nm for average optical powers (from lowest to highest current response) of 11(red), 110(green), 750(blue) μW. A comparison of the IV response for the same MSM structure on regular and low-temperature GaAs is shown in the inset.
(Color online) Optoelectronic response (from lowest to highest pulse amplitude) of 7.8-(black), 12.5-(red), and 22.5-μm(green) pitch LT-GaAs heterojunction MSM (HMSM) photodetectors at 9-V bias to laser pulses at 830 nm with 11-μW optical power. The inset shows the same rise-time and pulsewidth for the devices, demonstrating our measurement system’s limit.
(Color online) Comparison of the optoelectronic response (from highest to lowest pulse amplitude) of 22.5- and 12.5-μm pitch HMSM photodetectors on RT-GaAs (red and black) to those on LT-GaAs (blue and green) at 9-V bias to laser pulses at 830 nm with 11-μW optical power. RT devices show increased rise times and larger pulsewidths.
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