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Donor impurity states in wurtzite InGaN staggered quantum wells
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10.1063/1.3662848
/content/aip/journal/apl/99/20/10.1063/1.3662848
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/20/10.1063/1.3662848
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The conduction band potential profiles and the electron wave function in WZ InGaN staggered QWs. The black solid and dashed lines are for the band diagram of the staggered QWs with and without the built-in electric field. The red solid line for the electron function distribution.

Image of FIG. 2.
FIG. 2.

(Color online) The ground-state donor binding energy Eb as a function of impurity position zi in WZ In0.2Ga0.8N/InyGa1−yN staggered QWs with well width L = 4 nm and for different In compositions y. The curves a, b, and c are for the In composition y = 0.05, 0.10, and 0.15, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) The ground-state donor binding energy Eb as a function of In composition y in WZ In0.2Ga0.8N/InyGa1−yN staggered QWs with well widths L = 4 nm and for different impurity positions zi. The curves A, B, C, D, and E are for the impurity position zi = −L, −L/2, 0, L/2, and L, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) The ground-state donor binding energy Eb as a function of well width L in WZ In0.2Ga0.8N/In0.1Ga0.9N staggered QWs for different impurity positions zi. The curves A, B, C, D, and E are the same as in Fig. 3.

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/content/aip/journal/apl/99/20/10.1063/1.3662848
2011-11-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Donor impurity states in wurtzite InGaN staggered quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/20/10.1063/1.3662848
10.1063/1.3662848
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