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Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
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10.1063/1.3663533
/content/aip/journal/apl/99/20/10.1063/1.3663533
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/20/10.1063/1.3663533
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Process flow: (a) InAlAs/InGaAs HEMT fabrication. (b) TFMS access fabrication. (c) Transfer on flexible substrate. (d) Final schematic geometry of our HEMT on flexible substrate. (e) Optical image of HEMT on flexible substrate.

Image of FIG. 2.
FIG. 2.

Output characteristics of the HEMT-RS and HEMT-FS. The top gate bias for HEMT-FS is 0.2 V and for HEMT-RS is 0.1 V, both gate steps are −0.1 V.

Image of FIG. 3.
FIG. 3.

The Mason’s unilateral power gain Ug as a function of frequency measured at VDS = 0.8 V (HEMT-RS), VDS = 1.2 V (HEMT-FS). On the inset, current gain |H21|2 as a function of frequency measured with the same voltages.

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/content/aip/journal/apl/99/20/10.1063/1.3663533
2011-11-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/20/10.1063/1.3663533
10.1063/1.3663533
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