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(Color online) Schematic illustration of gas mediated etching induced by a stationary electron beam with a top-hat flux profile. Empty and filled circles represent precursor gas molecules and adsorbates respectively. Inset: Cross-sectional electron image of a typical set of Pt-capped etch pits in SiO2.
(Color online) (a) Etch pit depth (Z) at the beam axis (r = 0) versus time simulated using the constant pressure and Clausing gas flow model and observed experimentally using 7 μm [+] and 4 μm [•] films of SiO2. (b) Transmission probability (P) plotted as a function of aspect ratio (Z/d).
(Color online) Dependence of XeF2 adsorbate concentration on electron exposure time, simulated using the constant precursor pressure and Clausing model of gas flow.
(Color online) Difference between etch pit depths (ΔZ) in a 7 μm film of SiO2 observed experimentally and calculated using the Clausing model of gas flow, and the fraction of electrons that cross the SiO2/Si interface (nSi /n), both plotted as a function etch pit depth. Inset: Plot of 500 electron trajectories simulated for a pit depth of 5.7 μm.
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