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Boron migration due to annealing in CoFeB/MgO/CoFeB interfaces: A combined hard x-ray photoelectron spectroscopy and x-ray absorption studies
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10.1063/1.3662967
/content/aip/journal/apl/99/22/10.1063/1.3662967
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3662967
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) B 1 s HAXPES spectra recorded with photon energy 2139 eV for the as prepared and the 36 minutes annealed samples. (b) B K-edge NEXAFS for the as prepared and RTA annealed MTJ samples. The entrance grid bias was set at −50 V.

Image of FIG. 2.
FIG. 2.

(Color online) B K-edge NEXAFS for B2O3, elemental B, MgB2, and Kotoite mineral.

Image of FIG. 3.
FIG. 3.

(Color online) B K-edge NEXAFS for 20 s RTA annealed sample at different entrance grid biases. Lower bias voltage implies more bulk sensitive measurement.

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/content/aip/journal/apl/99/22/10.1063/1.3662967
2011-11-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron migration due to annealing in CoFeB/MgO/CoFeB interfaces: A combined hard x-ray photoelectron spectroscopy and x-ray absorption studies
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3662967
10.1063/1.3662967
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