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Cross-sectional bright-field TEM images of the GaSb layer on GaAs (a) grown by IMF growth mode and (b) grown by non-IMF growth mode. The dot-like structures are the damaged areas created by ion milling.
(Color online) HAADF-STEM image of the interface from sample grown by non-IMF mode (a) at low magnification and (b) at higher magnification. The dark line marks the position of XEDS analysis and the arrow indicates the position of the interface of GaSb and GaAs. (c) Intensity profiles of Ga (solid triangles), As (solid circles), Sb (open circles), and HAADF intensity (solid squares). (d) The values of xSb and xAs depend on position in the GaAsSb buffer layer.
(Color online) (a) Atomic-scale high resolution HAADF-STEM image from sample grown by non-IMF mode. The white lines indicate the interface of high-contrast regions and the white arrows mark the position of dislocations. (b) Strain map parallel (ɛxx) with the interface. The brighter dots indicate the dislocation core. (c) The local measurement of strain as a function of the distance perpendicular to the interface.
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