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A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
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10.1063/1.3663571
/content/aip/journal/apl/99/22/10.1063/1.3663571
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663571
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional bright-field TEM images of the GaSb layer on GaAs (a) grown by IMF growth mode and (b) grown by non-IMF growth mode. The dot-like structures are the damaged areas created by ion milling.

Image of FIG. 2.
FIG. 2.

(Color online) HAADF-STEM image of the interface from sample grown by non-IMF mode (a) at low magnification and (b) at higher magnification. The dark line marks the position of XEDS analysis and the arrow indicates the position of the interface of GaSb and GaAs. (c) Intensity profiles of Ga (solid triangles), As (solid circles), Sb (open circles), and HAADF intensity (solid squares). (d) The values of xSb and xAs depend on position in the GaAsSb buffer layer.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Atomic-scale high resolution HAADF-STEM image from sample grown by non-IMF mode. The white lines indicate the interface of high-contrast regions and the white arrows mark the position of dislocations. (b) Strain map parallel (ɛxx) with the interface. The brighter dots indicate the dislocation core. (c) The local measurement of strain as a function of the distance perpendicular to the interface.

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/content/aip/journal/apl/99/22/10.1063/1.3663571
2011-12-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663571
10.1063/1.3663571
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