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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
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10.1063/1.3663573
/content/aip/journal/apl/99/22/10.1063/1.3663573
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663573
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Transfer characteristics together with gate current as a function of Vgs of AlGaN/GaN HEMTs with different TDDs before and after off-state stress.

Image of FIG. 2.
FIG. 2.

(Color online) Gate-lag as a function of Vds for AlGaN/GaN HEMTs with different TDDs before (dashed lines) and after off-state stress (solid lines). Gate-lag was determined from a comparison between DC and pulsed Id as (IdDC − IdP )/IdDC . Insets show averaged relative changes of Vth and Idmax obtained from transfer and output characteristics of HEMTs with different TDDs where subscript “F” and “R” refer to fresh and stressed device after recovery, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Trapping characteristics, derivative of drain current versus time, measured on AlGaN/GaN HEMTs with different TDDs before (dashed lines) and after off-state stress (solid lines), revealing trap peaks present in the devices. Inset shows Arrhenius plot for extraction of activation energy of Tp1 on HEMT with TDD = 2 × 1010 cm−2 after stress.

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/content/aip/journal/apl/99/22/10.1063/1.3663573
2011-11-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663573
10.1063/1.3663573
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