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(Color online) A sketch of a four-terminal graphene device under two reversal top gate voltages V and −V, the atom labeling rule in the center region and, and the terminal indices.
(Color online) Dispersion and transverse eigenstates of a gated armchair graphene ribbon with 150 lateral atom number and V = 0.5t/e, where t is the hopping energy of the tight-binding model. (a) Electron-like dispersion near the upper edge. (b) Hole-like dispersion near the lower edge. (c) Direct overlap of the dispersion curves shown in (a) and (b). (d) Dispersion of the gated graphene ribbon, where k is the wavevector in x-direction, and a is the length along x-direction of the translational cell. (e)–(g) show the transverse eigenstates corresponding to the point A, B, and C, respectively.
(Color online) The Hall conductance and the longitudinal conductance versus the Fermi energy for different longitudinal atom number NL with the lateral atom number NW = 27 and the gate voltage V = 0.5t/e.
(Color online) The Hall conductance versus the Fermi energy for (a) different impurity intensity D with fixed impurity percentage P = 50% and (b) different P with fixed D = t, for the lateral atom number NW = 27, the longitudinal atom number NL = 32, and the gate voltage V = 0.5t/e. Each curve is obtained by taking the average of 30 calculations.
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