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Interband optical properties of silicon [001] quantum wells using a two-conduction-band k · p model
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10.1063/1.3663974
/content/aip/journal/apl/99/22/10.1063/1.3663974
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663974

Figures

Image of FIG. 1.
FIG. 1.

Allowed interband transitions in Si and GaAs QWs for light polarized parallel (solid arrow) and perpendicularly (dashed arrow) to the well plane.

Image of FIG. 2.
FIG. 2.

Transition energies as a function of the well thickness for the first four allowed transitions. The inset is the valley splitting for the two lowest CB doublets.

Image of FIG. 3.
FIG. 3.

Optical dipole matrix elements as a function of the well thickness for the first four allowed transitions. The inset is a zoom of the dashed window.

Image of FIG. 4.
FIG. 4.

Radiative recombination rate of Si QWs as a function of the transition energy for transition .

Image of FIG. 5.
FIG. 5.

Calculated PL intensity as a function of the light wavelength. The inset is a zoom of the dashed window.

Tables

Generic image for table
Table I.

Number of Si QWs required to have similar oscillator strengths (OS) than in a single GaAs QW.

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/content/aip/journal/apl/99/22/10.1063/1.3663974
2011-12-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interband optical properties of silicon [001] quantum wells using a two-conduction-band k · p model
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3663974
10.1063/1.3663974
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