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Allowed interband transitions in Si and GaAs QWs for light polarized parallel (solid arrow) and perpendicularly (dashed arrow) to the well plane.
Transition energies as a function of the well thickness for the first four allowed transitions. The inset is the valley splitting for the two lowest CB doublets.
Optical dipole matrix elements as a function of the well thickness for the first four allowed transitions. The inset is a zoom of the dashed window.
Radiative recombination rate of Si QWs as a function of the transition energy for transition .
Calculated PL intensity as a function of the light wavelength. The inset is a zoom of the dashed window.
Number of Si QWs required to have similar oscillator strengths (OS) than in a single GaAs QW.
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