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XRD pattern (a) and SEM image (b) of GaN NWs. XRD pattern (c) and SEM image (d) of Mn:GaN NWs. The vertical lines in (a) and (c) indicate XRD pattern of bulk wurtzite GaN. Inset in (d) shows lattice-resolved Mn:GaN NW, having 〈0001〉 growth direction (indicated with the arrow).
(Color online) (a) Mn K-edge NEXAFS spectra of Mn:GaN NWs at two different regions of the growth substrate (1 and 2), and the reference compounds (as indicated in the graph). (b) Half-height energy analysis of the average oxidation state of Mn dopants in GaN NWs.
(a) STXM image of a Mn:GaN NW collected using 633 eV photons. (b) Mn L2,3-edge NEXAFS spectrum of Mn:GaN NW corresponding to the designated area in (a) (solid line), and the calculated spectra for different amounts of Mn2+ and Mn3+ in Td coordination (Ref. 17) based on the linear combination analysis (dotted line). The arrow indicates a decrease in Mn2+ percentage (labeled for each spectrum).
(Color online) (a) Mn L2,3-edge NEXAFS spectra of a single Mn:GaN NW collected with LCP (blue) and RCP (red) x-ray beam (top) and the corresponding XMCD spectrum (bottom). Inset: NW orientation dependence of XMCD intensity. (b) Magnetization data of as synthesized Mn:GaN NWs on the growth substrate corrected for diamagnetic contribution. All data were collected at 300 K.
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