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Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Comparison of the (a) LBIC map of a Si wafer solar cell, (b) EL image of the same cell using an InGaAs camera, (c) the spatially resolved spectrum amplitude, and (d) the spectrum integral. The cell was scanned left-to-right, resulting in the shadow and reflection seen from the contact assembly.

Image of FIG. 2.
FIG. 2.

(Color online) Four distributions (black solid lines) fit to a single measured EL spectrum (red dots). The normal (a), skew normal (b), lognormal (c), and double skew normal (d) have R2 values of 0.990, 0.995, 0.984, and 0.997, and the average time to fit 5390 spectra was 14, 12, 97, and 40 ms, respectively. The images of Figs. 3(b) and 3(c) were generated using the parameter marked in (a) and (b). Si bandgap luminescence extends below 900 nm, but the spectrum drops near 1000 nm due to the QE of the InGaAs camera.

Image of FIG. 3.
FIG. 3.

(Color online) The LBIC map (a) shows agreement with a normal image (b) and skew normal image (c) generated using a calibration (solid blue) (d). The calibration in (d) was derived from the skew normal distribution using the equation with constants {a,b,c,d}. Comparatively, the mean, median, and standard deviation of the LBIC distribution was 174.3, 171.8, and 42.6 μm while the derived distribution was 183.4, 180.9, and 36.5 μm, respectively. Thus, the relative errors were 5.2%, 5.3%, and 14.5%, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence