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(a) Schematic cross-section of VTFT and (b) associated equivalent capacitances. Inset shows cross-section SEM image of fabricated device.
(Color online) Transfer characteristics of a-Si:H VTFT with 30 nm SiNx gate dielectric. Inset depicts output characteristics of the device.
(Color online) Output characteristics of VTFTs with 30, 50, and 100 nm SiNx gate dielectric at VGS = 5 V. Inset illustrates drain leakage current as a function of drain voltage at VGS = 0 V.
(Color online) Transfer characteristics of several a-Si:H VTFTs with identical lateral dimensions but different gate dielectric thicknesses. Inset shows associated gate leakage current.
(Color online) Sub-threshold slope (S), OFF-current (IOFF ), threshold voltage (VT ), and ON/OFF current ratio (ION /IOFF ) as a function of gate dielectric thickness for transistors with identical lateral dimensions.
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