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Effect of gate dielectric scaling in nanometer scale vertical thin film transistors
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10.1063/1.3664217
/content/aip/journal/apl/99/22/10.1063/1.3664217
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664217
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross-section of VTFT and (b) associated equivalent capacitances. Inset shows cross-section SEM image of fabricated device.

Image of FIG. 2.
FIG. 2.

(Color online) Transfer characteristics of a-Si:H VTFT with 30 nm SiNx gate dielectric. Inset depicts output characteristics of the device.

Image of FIG. 3.
FIG. 3.

(Color online) Output characteristics of VTFTs with 30, 50, and 100 nm SiNx gate dielectric at VGS  = 5 V. Inset illustrates drain leakage current as a function of drain voltage at VGS  = 0 V.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of several a-Si:H VTFTs with identical lateral dimensions but different gate dielectric thicknesses. Inset shows associated gate leakage current.

Image of FIG. 5.
FIG. 5.

(Color online) Sub-threshold slope (S), OFF-current (IOFF ), threshold voltage (VT ), and ON/OFF current ratio (ION /IOFF ) as a function of gate dielectric thickness for transistors with identical lateral dimensions.

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/content/aip/journal/apl/99/22/10.1063/1.3664217
2011-11-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gate dielectric scaling in nanometer scale vertical thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664217
10.1063/1.3664217
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