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Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack
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10.1063/1.3664220
/content/aip/journal/apl/99/22/10.1063/1.3664220
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664220
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Planar view TEM micrograph of MNCs distribution and cross-sectional view of (b) Au-NC and (c) Pt-NC samples. The average diameter of the NCs is around 3 nm.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Potential profile across the electron cloud (A-A′) and inset shows the KFM image after charge injection, (b) evolution of potential profile at t = 10 min and t = 83 min after charge injection in Pt- and Au- samples (normalized to peak at t = 10 min), (c) schematic potential landscape of the two adjacent nanocrystals during retention, and (d) illustration of two main charge decay mechanisms in NC-embedded gate stack: P1 corresponds to the inter-dot tunneling and P2 refers to vertical charge loss.

Image of FIG. 3.
FIG. 3.

(Color online) Time dependence of normalized (a) potential and (b) FWHM of Au and Pt samples after charge injection of −4, −6, and −8 V for 10 s. The inset shows characteristic time constant τ from the curve fitting.

Image of FIG. 4.
FIG. 4.

(Color online) Discharging (relaxation) current measurement in (a) Pt and (b) Au samples at temperature ranging from 300 to 450 K. The inset shows the change in magnitude of slope n with temperature from the curve fitting.

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/content/aip/journal/apl/99/22/10.1063/1.3664220
2011-11-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664220
10.1063/1.3664220
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