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Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
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10.1063/1.3664222
/content/aip/journal/apl/99/22/10.1063/1.3664222
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664222

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic sample structure and EFM analysis method: (a) charge injection with contact mode and (b) CPDs measurement.

Image of FIG. 2.
FIG. 2.

(Color online) The measured CPDs profiles after injection of electrons (a) and holes (b). The integrated charge densities of electrons and holes from CPDs (c) and the calculated electron densities of samples (d).

Image of FIG. 3.
FIG. 3.

(Color online) Cross section HRTEM image of samples with various charge trapping structures of 7 nm HfO2 layer (H1 and H2), 7 nm Al2O3 layer (A1 and A2), and 2 nm/7 nm Al2O3/HfO2 bi-layers (B1 and B2). The insets exhibit FFT analyses of selected areas.

Image of FIG. 4.
FIG. 4.

(Color online) Electron densities extracted from the CPDs of various samples versus elapsed time.

Tables

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Table I.

Extracted diffusion coefficients for different samples.

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/content/aip/journal/apl/99/22/10.1063/1.3664222
2011-11-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664222
10.1063/1.3664222
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