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Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories
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Image of FIG. 1.
FIG. 1.

(Color online) Measured normalized R for amorphous GST films as a function of time from the sputtering deposition and for a PCM cell as a function of time after reset. GST films were either stress-free (<5 MPa) or affected by a tensile stress of about 50 MPa. All data obey the power-law in Eq. (1) with ν around 0.1, irrespective of the stress level.

Image of FIG. 2.
FIG. 2.

(Color online) Schematic layout (left) and cross section (right) of a PCM device, indicating the amorphous cap, the bottom electrode, or BE, and the nitride stressor layers.

Image of FIG. 3.
FIG. 3.

(Color online) Measured resistance as a function of programming voltage Vprog (a) and drift exponent ν as a function of R (b) for PCM cells with high and low compressive stress levels in the amorphous cap. The different internal stress due to stressor layers do not result in significantly different drift behaviors.


Generic image for table
Table I.

Measured exponent ν of the drift for different samples and stress conditions. The average ν from Fig. 3(b) was included for PCM cells with different nitride layers.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories