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Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor
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10.1063/1.3664635
/content/aip/journal/apl/99/22/10.1063/1.3664635
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664635
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron microscope picture of the resonant LT-GaAs photoconductor.

Image of FIG. 2.
FIG. 2.

(Color online) Experimental set-up used for the photomixing experiment: λ/2, half-wave plate; P, polarizer; SOA, semiconductor optical amplifier.

Image of FIG. 3.
FIG. 3.

(Color online) Bias voltage dependence of the dc photocurrent Idc for an optical power Popt  = 107 mW. Inset: Idc as function of the optical power for a bias voltage VB  = 3.5 V.

Image of FIG. 4.
FIG. 4.

(Color online) Output power versus photocurrent for beatnotes frequencies fB  = 50 and 305 GHz. The optical power (Popt  = 107 mW) is kept constant while the bias voltage is varied. Inset: output power versus photocurrent for fB  = 305 GHz. The bias voltage (VB  = 3.5 V) is kept constant while Popt is varied.

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/content/aip/journal/apl/99/22/10.1063/1.3664635
2011-11-29
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/22/10.1063/1.3664635
10.1063/1.3664635
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